Hybrid superconductor-semiconductor devices are currently one of the mostpromising platforms for realizing robust Majorana zero modes. We address therole of band bending and superconductor-semiconductor hybridization in suchdevices by analyzing a gateable planar Al-InAs interface using aself-consistent Schr\"odinger-Poisson approach. Our numerical analysis showsthat the band bending leads to an interface quantum well, which localizes thecharge in the system near the superconductor-semiconductor interface. Weinvestigate the hybrid band structure of the system and analyze its response tovarying the gate voltage and thickness of the Al layer, thereby showing thatone may obtain states with strong superconductor-semiconductor hybridization atthe Fermi energy. In addition, we obtain approximate analytical expressions tofurther back our numerical findings. We conclude by discussing the consequencesof our findings for the realization of Majorana zero modes in nanowire-basedsystems.
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